Title of article
Hysteresis characteristics of vacuum-evaporated ferroelectric PbZr,.,Ti,.,O, films on Si(ll1) substrates using CeO, buffer layers
Author/Authors
Byung-Eun Park * ، نويسنده , , Ikuo Sakai، نويسنده , , Eisuke Tokumitsu * ، نويسنده , , Hiroshi Ishiwara، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
6
From page
423
To page
428
Abstract
We demonstrate the ferroelectric behavior of PZT films grown on Si(ll1) substrates by using CeO, buffer layer. PZT
(90 nm) films were prepared by electron beam assisted vacuum evaporation system and CeO, (27 nm) films were prepared
by MBE (molecular beam epitaxy). It is found that a hysteresis is not shown in the capacitance-voltage (C-V)
characteristics of CeO,/Si structures, whereas a hysteresis is obtained in the C-V plot of PZT/CeO,/Si structures, which
is due to the ferroelectric nature of the PZT film. In addition, it is shown that the leakage current of PZT/CeO,/Si is as low
as lo-’ A/cm* at 8 V
Keywords
MFSFETs , ferroelectric , CEO , Vacuum evaporation , PZT
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991824
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