Title of article
Occupation site and distribution of S-doped Er in InP measured by X-ray CTR scattering
Author/Authors
K. Fujita *، نويسنده , , Kenji J. Tsuchiya، نويسنده , , S. Ichiki، نويسنده , , H. Hamamatsu، نويسنده , , N. Matsumoto، نويسنده , , M. Tabuchi، نويسنده , , Y. Fujiwara، نويسنده , , Y. Takeda، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
785
To page
789
Abstract
Atomic level hetero-structure analysis of Er S-doped InP grown by OMVPE was successfully made by the X-ray crystal
truncation rod (CTR) scattering measurement using synchrotron radiation. It was shown that Er atoms in the S-doped InP
formed rocksalt structure ErP. Distributions of the Er atoms around the S-doped layers were also revealed clearly on the
atomic scale. The total amounts of incorporated Er increased exponentially as the Er supply time increased
Keywords
OMVPE , synchrotron radiation , InP , CTR , Er doping
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991889
Link To Document