XPS studies on silicide formation in ion beam irradiated AurSi system

X-ray photoelectron spectroscopic XPS.studies were carried out on ion-beam irradiated AurSi system. Thin films of Au 500 A°.were vapour deposited on Si 111:and irradiated with 120 keV Arq ions at different temperatures. The XPS investigation showed the formation of gold silicide. Even in the case of the sample irradiated at room temperature silicide phase was observed at the top surface indicating the out-diffusion of silicon. Increase in the concentration of silicide phase at the top surface with increasing temperature of irradiation was observed suggesting higher out-diffusion of silicon at elevated irradiation temperature. The paper presents the results of the above study and proposes a simple model to explain the growth of the silicide phase. q1997 Elsevier Science B.V.