Initial stage of the growth of Fe on Si(111)(1 × 1)single bondH

We report an infrared absorption spectroscopy, angle resolved photoemission (ARUPS) and X-ray photoelectron diffraction (XPD) investigation of ultra-thin ( < 1 ML) Fe films deposited on Si(111)(1 × 1)single bondH surfaces. The results from ARUPS showed that the two hydrogen-induced surface states in the valence-band spectra remain unaffected after the iron deposition. This conclusion is also confirmed by the Sisingle bondH stretching infrared mode, which is not influenced by the metal deposition. Angular-scanned photoelectron diffraction (PD) of the Si 2p and Fe 3p core levels showed the formation of a well-ordered Fe/Si(111)single bondH interface even at room temperature and the substitution of subsurface Si atoms by iron atoms.