Be-chalcogenides: heteroepitaxy and interface properties

We report on the molecular beam epitaxy and the properties of Be-chalcogenides. Especially the interface between ZnSe and BeTe and BeTe/ZnSe superlattices have been studied by means of HRXRD (high resolution X-ray diffraction), HRTEM (high resolution transmission-electron-microscopy), RHEED (reflection-high-energy-electron-diffraction), photo-electron-spectroscopy (PES) and photo-luminescence (PL). A strong dependence of the structural and electronic properties of these superlattices (SL) on the interface configuration has been found. A high valence band offset of about 1 eV between BeTe and ZnSe has been determined by means of photo-luminescence and photo-electron-spectroscopy.