Title of article
Initial stage of SiO2 valence band formation
Author/Authors
K. Hirose، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
4
From page
542
To page
545
Abstract
Detailed changes in valence band spectra of ultra-thin SiO2 at initial stages of oxidation are revealed by high resolution X-ray photoelectron spectroscopy. Comparisons of the experimental data with molecular orbital calculations deduce the transition structure near the SiO2/Si interfaces.
Keywords
SiO2 , SiO2/Si interface , transition layer , XPS , Molecular orbital calculation , DV-X ? method
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992263
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