Title of article
Theory of quantum dot formation in Stranski-Krastanov systems
Author/Authors
H.T. Dobbs، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
7
From page
646
To page
652
Abstract
The formation of coherent three-dimensional (3D) islands during Stranski-Krastanov growth of semiconductors is modelled with rate equations. Effects of strain are included in the growth rate of two-dimensional (2D) islands (atop a wetting layer) and in the transformation of 2D into 3D islands. Comparisons with measured 3D island densities for InP grown on GaP-stabilised GaAs(001) by metalorganic vapor-phase epitaxy are used to parametrize the model and to identify the rate-determining steps for 3D island formation.
Keywords
Strain , Semiconductor heteroepitaxy , Rate equations , Vapor-phase epitaxy , Self-assembled quantum dots
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992284
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