Title of article
GaAs/AlAs lateral superlattices on vicinal surfaces: from growth issues to new electronic properties
Author/Authors
F. Laruelle، نويسنده , , F. Lelarge، نويسنده , , A. Cavanna، نويسنده , , T. Mélin، نويسنده , , F. Petit-Coviaux، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
5
From page
682
To page
686
Abstract
The AFM topography of GaAs vicinal surfaces shows that the step-step interaction is dominated by an important dipolar term which compensates the low kink energy to give straight ledges at 600°C. The Ga/Al ordering in GaAs/AlAs lateral superlattices is shown to be limited by the step array disorder as well as by the vertical exchange treated in a mean field approximation.
Keywords
GaAs , Lateral superlattices , Vicinal surfaces , Segregation , Step interaction
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992290
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