Laser-induced metal-organic chemical vapor deposition (MOCVD) of Cu(hfac)(TMVS) on amorphous Teflon AF1600: an XPS study of the interface

Pulsed KrF excimer laser radiation (248 nm) was used to activate copper deposition from Cu(hfac)(TMVS) onto Teflon AF1600. The interface was examined using X-ray photoelectron spectroscopy (XPS) for thicknesses up to several monolayers. We found that Teflon carbons are the only substrate atoms involved in chemical bonding. Cu0 and CuI-hfac were found to be uniformly distributed throughout the deposited film with additional CuI–C closer to the substrate surface.