• Title of article

    Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium

  • Author/Authors

    Satoshi Sugahara، نويسنده , , Kimihiko Hosaka، نويسنده , , Masakiyo Matsumura، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1998
  • Pages
    7
  • From page
    327
  • To page
    333
  • Abstract
    Reaction process has been studied for an atomic hydrogen-induced abstraction of methyl groups on the Ge surface. The reaction rate estimated from experiments had a very large activation energy and depended on a surface coverage of methyl groups; they are not expected for a ‘pure’ Eley–Rideal mechanism. The process can be explained by the ‘modified’ Eley–Rideal mechanism or the ‘precursor’ mechanism based on two-dimensionally bound hydrogen atoms on the surface. q1998 Elsevier Science B.V. All rights reserved
  • Keywords
    methyl group , Abstraction reaction , Atomic layer epitaxy , Ge , Atomic hydrogen , Dimethylgermane
  • Journal title
    Applied Surface Science
  • Serial Year
    1998
  • Journal title
    Applied Surface Science
  • Record number

    992623