Title of article
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Author/Authors
Satoshi Sugahara، نويسنده , , Kimihiko Hosaka، نويسنده , , Masakiyo Matsumura، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
7
From page
327
To page
333
Abstract
Reaction process has been studied for an atomic hydrogen-induced abstraction of methyl groups on the Ge surface. The
reaction rate estimated from experiments had a very large activation energy and depended on a surface coverage of methyl
groups; they are not expected for a ‘pure’ Eley–Rideal mechanism. The process can be explained by the ‘modified’
Eley–Rideal mechanism or the ‘precursor’ mechanism based on two-dimensionally bound hydrogen atoms on the surface.
q1998 Elsevier Science B.V. All rights reserved
Keywords
methyl group , Abstraction reaction , Atomic layer epitaxy , Ge , Atomic hydrogen , Dimethylgermane
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992623
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