Atomic structure studies of 113/B GaAs surfaces grown by metalorganic vapor phase epitaxy

Microscopic structure on GaAs 113.B surface grown by metalorganic vapor phase epitaxy MOVPE.is studied by reflection high-energy electron diffraction RHEED.and ultrahigh-vacuum scanning tunneling microscopy UHV-STM.. Monolayer steps and wide terraces are observed on the 113.B GaAs surfaces similar to the case for 001.surfaces. On the wide terraces, small two-dimensional islands and holes are also recognized. RHEED patterns show streaks corresponding to the periods of about 0.8 nm perpendicular tow332xdirection and about 0.7 nm perpendicular tow110xdirection, indicating the existence of the surface reconstruction. The period of 0.66 nm tow332xdirection is confirmed by STM observation, although the period tow110xdirection cannot be confirmed. Based on these results, a possible model for the reconstruction structure on GaAs 113.B surface is proposed, and the stability of 113.B GaAs surface is discussed. q1998 Elsevier Science B.V. All rights reserved