The effect of surface modification on the formation of quantum structures in highly mismatched heterostructures: InAs on GaAs 100/

The effect of interface modification by insertion of Se layer on the formation of InAs dots on GaAs 001.is investigated by means of reflection high energy electron diffraction RHEED.and atomic force microscope. The incorporation of a Se single layer into the interface is found to give rise to an extended critical thickness, presumably due to reduction of interface energy by the formation of Se–GarSe–In bonds. The reorganization of InAs supercritical 2D layers to form InAs dots on Se-treated GaAs 001.surface is reviewed by AFM images. q1998 Elsevier Science B.V. All rights reserved