Effect of H2 dilution on the surface composition of plasma-deposited silicon films from SiH4

The surface composition of silicon films deposited from SiH4, Ar, and H2 plasmas was studied using in situ attenuated total reflection Fourier transform infrared spectroscopy with emphasis on the effects of H2 dilution. In the absence of H2, the surface is primarily covered with SiH3 and SiH2. With heavy H2 dilution, the surface is predominantly monohydride terminated with infrared absorption frequencies consistent with the presence of SiH on Si (100) and Si (111) surfaces.