Field emission devices with built-in p–i–n junctions

A field emitter array (FEA) containing emitters each with a built-in p–i–n junction for limiting and stabilizing emission current is fabricated. The junction is first formed over an area where the emitters are located. The field emitters are then formed by isotropic etching with each emitter containing at least one p–i–n junction. When a constant voltage is applied across the emitters and collectors, non-uniform emission of the emitters can be limited by the built-in p–i–n junctions and abrupt emission from one or few emitters of the array is prevented. The characteristics of the p–i–n FEA is also compared to that of the n–p FEA and n FEA. The p–i–n FEA shows an extremely stable emission and a saturation behaviour at high electric field region.