Comparison of the interdiffusion lengths in GaAs/Al0.35Ga0.65As multiple quantum wells determined from photoluminescence and double crystal X-ray rocking curve measurements

Photoluminescence (PL) and double crystal X-ray rocking curve (DCRC) measurements were performed in order to determine the interdiffusion length in GaAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy (MBE) treated by rapid thermal annealing. The PL spectra show that the ground state energy level in the GaAs quantum well increases after thermal annealing, and the interdiffusion length is calculated using this result. After the potential profile as a function of the diffusion length was determined, an Al mole fraction, an structure factor and an satellite peak of the m=+1 in the well and barrier sides were determined. The diffusion length in the quantum well interface was also determined from the experimental and theoretical values from the satellite peak intensities of the m=±1. The agreement of the interdiffusion length value between PL and DCRC results is reasonable.