Title of article
Interaction between Co and SiO2
Author/Authors
E. Kondoh، نويسنده , , R.A. Donaton، نويسنده , , S. Jin، نويسنده , , H. Bender، نويسنده , , W. Vandervorst، نويسنده , , K. Maex1، نويسنده , , 1، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
8
From page
87
To page
94
Abstract
Cobalt thin films deposited on SiO2 were processed by rapid thermal annealing. Agglomeration of Co takes place during the annealing, and the formed Co globules penetrate into the SiO2, resulting in crater-like erosion pits. The presence of reaction is evidenced by the formation of a crystalline orthosilicate compound (Co2SiO4). The reaction mechanism is discussed in view of the presence of water at the oxide surface.
Keywords
SiO2 (silicon dioxide) , Rapid thermal annealing (RTA) , Cobalt
Journal title
Applied Surface Science
Serial Year
1998
Journal title
Applied Surface Science
Record number
992857
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