Title of article
Epitaxial MnO thin films grown by pulsed laser deposition
Author/Authors
W. Neubeck، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
195
To page
198
Abstract
By using pulsed laser deposition under vacuum from Mn2O3 targets epitaxial MnO thin films have been grown. The
substrates used were sapphirew001xand MgOw111x. Best results were achieved at a pressure of 10y4 mbar and at substrate
temperatures of 7008C. The films were characterised by using grazing incidence X-ray scattering as well as u–2u Bragg
scattering. Part of the characterisation was done with synchrotron radiation at beamline ID20 of the ESRFrGrenoble. The
films show lattice parameters close to the bulk ones. The growth direction was found to bew111x. RBS measurements were
used to check interdiffusion and film thickness. Typical film thicknesses were from 200 A°up to 3500 A°. These films have
been studied by magnetic X-ray scattering experiments at the ESRF. They exhibit antiferromagnetic long range order similar
to bulk crystals. q1999 Elsevier Science B.V. All rights reserved.
Keywords
Laser ablation , manganese oxide , thin films , Characterisation , synchrotron
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
992953
Link To Document