Title of article
In-situ measurements of excimer laser irradiated zinc sulphide films on silicon
Author/Authors
David Sands، نويسنده , , Philip Key، نويسنده , , James Hoyland، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
240
To page
243
Abstract
Time-resolved reflectivity at 675 nm of thin films of zinc sulphide on silicon during excimer laser irradiation is
contrasted with theoretical calculations based on known data for the temperature dependence of the refractive index of both
film and substrate and temperature profiles generated using an analytical solution of the heat diffusion equation for a
two-layer system. The calculated rates of heating and cooling are found to be in excellent agreement with the experimental
measurements and the maximum surface temperature at the ablation threshold is found to be 11508C. We conclude therefore
that the zinc sulphide does not reach the melting point ;18008C.before the onset of ablation and that sublimation plays a
significant part in the ablation process. q1999 Elsevier Science B.V. All rights reserved.
Keywords
Zinc sulphide , Laser ablation , thin films , Transfer matrix , Reflectivity
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995071
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