Title of article
Oxygen effect on the conductivity of the Cu OrZnO 0001/and x 0001/systems
Author/Authors
P.J. M?ller، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
5
From page
210
To page
214
Abstract
Thin copper oxide film formation on the polar ZnO 0001.and ZnO 0001.surfaces under ultra-high vacuum conditions
was monitored by LEED, Auger, TCS and work-function measurements. The 2.5 nm thick discontinuous oxide films
contained a mixture of CuO, Cu2O and ZnO. The effect of oxygen gas on the conductivity of the thin films has been
measured, and a more pronounced increase of a relative resistance of the film is observed in the temperature range 400–500
K. q1999 Elsevier Science B.V. All rights reserved
Keywords
Semiconductor–semiconductor interfaces , zinc oxide , Surface electronic phenomena , Conductivity , Copper oxides
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995294
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