GaN and InGaN prepared by hot wall beam epitaxy

GaN and InGaN epilayers were successfully obtained on nitrided Ga buffer layers predeposited on the sapphire 0001. substrate by Hot Wall Beam Epitaxy HWBE.using Ga andror In metals, NH3 gas or RF plasma nitrogen source. For both films, the surface morphology was smooth and the PL spectra showed strong near-band-edge emission without deep level emission. For the InGaN films, the highest In mole fraction of 24% was obtained with the substrate temperature Tsub.of 575 and the RF power of 500 W, which was estimated from the shift of X-ray diffraction peak. q1999 Published by Elsevier Science B.V. All rights reserved.