Title of article
Growth of Ga In As Sb solid solutions from the 1yx x y 1yy five-component Ga–In–As–Sb–Pb melt by liquid phase epitaxy
Author/Authors
E.V. Kunitsyna )، نويسنده , , I.A. Andreev، نويسنده , , N.A. Charykov، نويسنده , , Yu.V. Solov’ev، نويسنده , , Yu.P. Yakovlev، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
371
To page
374
Abstract
Gallium antimonide GaSb.and its solid solutions are widely used in optoelectronic devices for the ecologically
important spectral range 2–5 mm. In this paper we discuss a novel approach of using neutral solvents such as Pb.in
GaInAsSb growth process. We employed the excess thermodynamic functions and linear combinations of chemical
potentials EFLCP.thermodynamic model to calculate the melt–solid phase diagrams in the Ga–In–As–Sb–Pb system.
q1999 Elsevier Science B.V. All rights reserved.
Keywords
EFLCP thermodynamic model , Ga1yxInxAsySb1yx , Ga–In–As–Sb–Pb system , Gibbs energy
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995325
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