• Title of article

    Growth of Ga In As Sb solid solutions from the 1yx x y 1yy five-component Ga–In–As–Sb–Pb melt by liquid phase epitaxy

  • Author/Authors

    E.V. Kunitsyna )، نويسنده , , I.A. Andreev، نويسنده , , N.A. Charykov، نويسنده , , Yu.V. Solov’ev، نويسنده , , Yu.P. Yakovlev، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    4
  • From page
    371
  • To page
    374
  • Abstract
    Gallium antimonide GaSb.and its solid solutions are widely used in optoelectronic devices for the ecologically important spectral range 2–5 mm. In this paper we discuss a novel approach of using neutral solvents such as Pb.in GaInAsSb growth process. We employed the excess thermodynamic functions and linear combinations of chemical potentials EFLCP.thermodynamic model to calculate the melt–solid phase diagrams in the Ga–In–As–Sb–Pb system. q1999 Elsevier Science B.V. All rights reserved.
  • Keywords
    EFLCP thermodynamic model , Ga1yxInxAsySb1yx , Ga–In–As–Sb–Pb system , Gibbs energy
  • Journal title
    Applied Surface Science
  • Serial Year
    1999
  • Journal title
    Applied Surface Science
  • Record number

    995325