Ferroelectric properties of Pb Zr Ti /O thin films prepared by 0.52 0.48 3 metal–organic decomposition process

The perovskite LaNiO3 LNO.and Pb Zr0.52Ti0.48.O3 PZT.thin films were successfully prepared using metal–organic decomposition MOD.process. Perovskite LNO phase can be obtained at temperature as low as 6008C 30 s.in rapid thermal annealing RTA.process. However, additional furnace annealing FA.at 6508C 60 min.is needed in order to lower the electrical resistivity of the LNO films to rF30 mV cm. Pure perovskite PZT films can easily be obtained by either RTA or FA process. Furnace post-annealing process 6508C, 60 min.results in a PZT film possessing significantly better ferroelectric properties than the RTA process 6508C, 60 s.. The best properties obtained are remanent polarization Prs11.8 mCrcm2, coercive force Ecs76.0 mCrcm2and leakage current density JLF3=10y6Arcm2 for applied fieldF200 kVrcm.. Using LNO films as buffer layer does not increase the ferroelectric properties of PZT films, but significantly improves fatigue behavior. q1999 Elsevier Science B.V. All rights reserved.