Boron-doping effect on the field emission behavior of pulse laser deposited diamond-like carbon films

Boron species have been successfully incorporated into the diamond-like carbon DLC.films via the utilization of B4C-graphite composite targets in pulsed laser deposition process. The boron-doping, in conjunction with the use of Au-coated silicon substrates, resulted in a DLC film with electron field emission properties superior to the films deposited on other kinds of substrates. The B-doped films deposited on Au-coated Si can be turned on at a field as low as E0s11.2 Vrmm with an effective work function as low as f0s0.0040 eV. They can emit a field emission current density as large as Jes1400 mArcm2 under 20 Vrmm applied field and be operated for 720 min, under 10y5 Torr, without significant degradation. The beneficial effect was attributed to the suppression of conduction barrier for electrons to transport from the substrates to the emission sites. q1999 Elsevier Science B.V. All rights reserved.