• Title of article

    Quantization of the free charge carriers on InSb at room temperature

  • Author/Authors

    A.M. Yafyasov )، نويسنده , , I.M. Ivankiv، نويسنده , , V.B. Bogevolnov، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    4
  • From page
    629
  • To page
    632
  • Abstract
    A new method of self-consistent quantum calculation of the density of the space charge near the surface of a crystal is carried out for the semiconductor with nonparabolic Kane.dispersion law of bands. The remarkable feature is the solution of the Schro¨dinger equation for electrons and holes in the energy range, including both bound energy states and states in the continuum. Theoretical voltage–capacitance dependence is calculated and coincides with experimental data. The dependence of the electron mass and surface mobility from the value of surface potential are analyzed. q1999 Elsevier Science B.V. All rights reserved
  • Keywords
    Surface mobility , Effective mass , Voltage–capacitance , InSb , Self-consistent quantum calculation
  • Journal title
    Applied Surface Science
  • Serial Year
    1999
  • Journal title
    Applied Surface Science
  • Record number

    995375