Title of article
Quantization of the free charge carriers on InSb at room temperature
Author/Authors
A.M. Yafyasov )، نويسنده , , I.M. Ivankiv، نويسنده , , V.B. Bogevolnov، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
629
To page
632
Abstract
A new method of self-consistent quantum calculation of the density of the space charge near the surface of a crystal is
carried out for the semiconductor with nonparabolic Kane.dispersion law of bands. The remarkable feature is the solution
of the Schro¨dinger equation for electrons and holes in the energy range, including both bound energy states and states in the
continuum. Theoretical voltage–capacitance dependence is calculated and coincides with experimental data. The dependence
of the electron mass and surface mobility from the value of surface potential are analyzed. q1999 Elsevier Science B.V. All
rights reserved
Keywords
Surface mobility , Effective mass , Voltage–capacitance , InSb , Self-consistent quantum calculation
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995375
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