Structural properties of lattice matched Zn Mg S Se rGaAs heterostructures

A nearly lattice-matched Zn0.92Mg0.08S0.12Se0.88 epilayer was grown on a GaAs 100.substrate by molecular beam epitaxy. The compositional profile of the Zn0.92Mg0.08S0.12Se0.88 layers were investigated by Auger electron spectroscopy. Transmission electron microscopy measurements were performed to investigate the crystallinity of the epitaxial layer and the interface. These results indicate that Zn0.92Mg0.08S0.12Se0.88 epitaxial films grown on GaAs substrates at 2508C have good interface structure and no serious interdiffusion problems and that the Zn0.92Mg0.08S0.12Se0.88 layers hold promise for applications as cladding layers for laser diodes and related optoelectronic devices operating in the blue spectral range. q1999 Elsevier Science B.V. All rights reserved.