Title of article
The DC characteristics of anisotype heterojunction in the presence of interface states and series resistance
Author/Authors
P. Chattopadhyay )، نويسنده , , D.P. Haldar 1، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
14
From page
287
To page
300
Abstract
The current–voltage and conductance–voltage characteristics of an anisotype heterojunction have been studied considering
the presence of interface states and series resistance. An expression for the diode ideality factor of the device has been
proposed. The temperature dependence of the diode ideality factor and the activation energy plot of these devices have been
evaluated. The experimental activation energy plot and the temperature dependence of the ideality factor of Ge–GaAs
heterojunction reported by Unlu et al. wM.S. Unlu, S. Strite, G.B. Gao, K. Adomi, H. Morkoc, Appl. Phys. Lett. 56 1990.
842x have been compared with the theory. q1999 Elsevier Science B.V. All rights reserved
Keywords
dc Characteristics , series resistance , Anisotype heterojunction , Current–voltage , Conductance–voltage , Interface states
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995414
Link To Document