Title of article
Formation of pyramids at surface of TMAH etched silicon
Author/Authors
W.K. Choi )، نويسنده , , J.T.L. Thong، نويسنده , , P. Luo، نويسنده , , Y. Bai، نويسنده , , C.M. Tan، نويسنده , , T.H. Chua، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
472
To page
475
Abstract
An investigation on the influence of etchant concentration and ambient temperature on the formation of pyramids arising
from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for
the investigation. From the results obtained from this study, we are able to explain the influence of the TMAH concentration
and ambient temperature on the changes occurring at the silicon surface satisfactorily using the pH theory. q1999 Elsevier
Science B.V. All rights reserved
Keywords
Etching parameters , Silicon , Tetramethylammonium hydroxide TMAH. , pyramids
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995512
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