Control of metal nanostructure morphology by means of applied Si potential

A fabrication technique of metal nanowires on silicon surface by using a wet process has been developed. By controlling silicon potential in a Cu ion-containing sulfuric acid solution, morphology of deposits can be controlled. When silicon potential against Pt counter electrode at y0.70 eV vs. SHE was applied, Cu nuclei were formed on the intersections of steps and grew into a continuous Cu wire as a result of connection of the isolated nuclei. The width of the wire was 50 nm by atomic force microscopy observation. The continuous wires are observed only in a narrow window of applied voltage around y0.70 eV. At the other condition of applied potential, the deposits were either isolated or hardly visible. q1999 Elsevier Science B.V. All rights reserved.