The dynamics of quantum dot formation in the InAs on GaAs 001/system: growth rate effects

Reflectance anisotropy spectroscopy RAS.has been used to monitor the formation and development of InAs islands grown onto GaAs 001.substrates in real time. This is possible because the signal at a photon energy of 4.0 eV is mainly sensitive to the thickness of the continuous inter-island wetting layer in the thickness range of interest. This makes it possible, for the first time, to follow the partition of material between the wetting layer and islands. Monitoring the deposition of 2 monolayers of material at a fixed growth temperature of 4758C reveals important details of the growth process, such as the fact that the fraction of the incident flux incorporated immediately into the islands is largely insensitive to growth rate. q1999 Elsevier Science B.V. All rights reserved.