Transmission electron microscopy study of InGaAsrInP superlattices grown on V-shaped surface InP substrates

Fabrication of InGaAsrInP quantum well wires obtained by growing InGaAsrInP superlattices on V-grooved surface 001.InP substrates is evidenced. The density of planar defects propagated through the epilayers of these heterostructures depends on the type A or B.of atoms which constitute the surface of the V-grooved 111.planes. The 111.B V-grooved surfaces are shown to generate more defects propagating through the heterostructure. q1999 Elsevier Science B.V. All rights reserved