Characterization of ultrathin SiO layers formed on a spatially x controlled atomic-step-free Si 001/surface

We have demonstrated the characterizations of the morphologies and local electrical properties of ultrathin -5 nm. SiO rSi 001.structures that were formed by thermal oxidation of a spatially controlled atomic-step-free Si 001.surface. x Both the SiO surface and the SiO rSi 001.interface had good morphology, with root-mean-square values of roughness, x x less than 0.12 nm. In contrast, spatial differences were observed in the local electrical properties measured using an atomic force microscope AFM.with nanometer scale resolution. q1999 Elsevier Science B.V. All rights reserved