A field emitter array monolithically integrated with a thin-film transistor on glass for display applications

We have fabricated a field emitter array FEA.monolithically integrated with a thin-film-transistor TFT., called a TFT-FEA, on glass and characterized its emission properties. Fabrication of the TFT-FEA on glass was conducted through low-temperature processes of less than 3508C. From experimental results, it was found that the emission current was well controlled by the TFT drain current and consequently became stable. Emission was also turned onroff by the TFT function at a low voltage of 3 V. With this TFT-FEA, very stable emission currents with fluctuations of less than 2% have been demonstrated. q1999 Elsevier Science B.V. All rights reserved