Fabrication of boron nitride planar field emitters

Boron nitride BN.films are grown on sapphire substrates by plasma-assisted chemical vapor deposition PACVD.. BN films are doped with sulfur. Insertion of the GaN layer between the BN film and sapphire leads to a tight adhesion of the BN film. The electrical resistivity of the sulfur-doped BN film is reduced to 103 V cm. The cathode electrode is formed on the BN film and the anode electrode on the sapphire substrate by evaporating Ti and Au. An emission current of 1 mA is obtained at an electric field strength of 16 Vrmm. q1999 Elsevier Science B.V. All rights reserved