Fabrication and characterization of a nanogap edge emitter with a silicon-on-insulator wafer

Si thin-film edge emitters with various gaps ranging from 15 nm to 55 nm were fabricated and characterized. Smooth, straight nanometer-scale gaps were made on a silicon-on-insulator wafer by using advanced microfabrication technology based on electron beam lithography, dry etching, and thermal oxidation. Electron emission occurred from voltage around 60 V and reached 100 nA at 70 V. The emission characteristics show no clear dependence on the gap distance. Measurements were also done in air to evaluate current leakage through nanogaps. Fabrication, structure, and emission characteristics are described in detail. q1999 Elsevier Science B.V. All rights reserved.