• Title of article

    Positron studies of MBE-grown gallium nitride

  • Author/Authors

    P. Rice-Evans، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    5
  • From page
    165
  • To page
    169
  • Abstract
    Defect distributions in thin GaN films on GaAs substrates have been assessed. Significant trapping at the interfaces has been observed. The analysis program ROYPROF has been employed to obtain a new parameter Li. to characterise the interface. It is suggested that this parameter is widely adopted. Anomalous positronium production was indicated. q1999 Elsevier Science B.V. All rights reserved.
  • Keywords
    Gallium nitride , Positron , Defect distribution
  • Journal title
    Applied Surface Science
  • Serial Year
    1999
  • Journal title
    Applied Surface Science
  • Record number

    995728

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=995728