Characterization of H-related defects in H-implanted Si with slow positrons

The thermal behavior of H-related defects in H-implanted Si has been investigated by positron beams. It is found that positrons are sensitive to the H-related defects and give a relatively low S parameter, equivalent to that of bulk Si, and a long lifetime. It is found that the defects terminated by H are stabilized up to 4008C and that high void density can be achieved at the narrow layer around the peak of H-implantation profile. q1999 Elsevier Science B.V. All rights reserved