The effect of nitrogen ion implantation on tungsten surfaces

X-ray diffraction XRD.and X-ray photoelectron spectroscopy XPS.were used to study the phase, composition and chemical states of elements at the tungsten surface. The measurement results indicate that nitrogen-containing phase of tungsten were formed by nitrogen ion implantation energy 40 keV, implantation doses of 4=1017, 8=1017 and 1.6=1018 ionsrcm2.. The formation of the W O,N. and WN in the surface layer occurred as a result of nitrogen ion irradiation. A x decrease in concentration of W O,N.is observed with increasing Nq while that WN increases. Due to residual oxygen in x the chamber WO3 still exists at the surface of the specimen. q1999 Elsevier Science B.V. All rights reserved