Atomic layer epitaxy of AlP and AlP/ GaP/ superlattice using n n ethyldimethylamine alane as a new aluminum source

Atomic layer epitaxy ALE.of AlP was realized using ethyldimethylamine alane EDMAAl.as a new Al source. Self-limiting growth of AlP took place at one and two monolayers per ALE cycle. Secondary ion mass spectroscopy revealed that the amounts of incorporated impurities carbon, hydrogen and oxygen.in ALE-grown AlP layers was greatly suppressed by using the new Al source, to nearly the same levels as in high-quality MOVPE-grown layers. We also achieved the successful ALE growth of AlP. GaP. short-period superlattices SLs., taking advantage of the overlapping n n temperature windows of ALE-GaP and ALE-AlP. X-ray diffraction measurements showed reasonably good interface abruptness of SLs as low as 3. The PL emission peak from SLs involving Al-containing layers was observed in ALE growth for the first time. q1999 Elsevier Science B.V. All rights reserved