Investigation of relative sputtering yields during ionoluminescence of Si

Atomic line emissions resulting from sputtered atoms and ions are investigated on Si 100.bombarded by 60 keV Neq, 300 keV Xeq and 300 keV SF5q ions. It has been observed that the presence of oxygen enhances light emission due to radiative de-excitation. Relative sputtering yields of Si for 60 keV Neq, 300 keV Xeq and 300 keV SF5q are estimated from the photon yields. The estimates of sputtering yields of adsorbed oxygen on Si for the above projectiles are also made from the transients of Si I 251.6 nm line. A non-linearity in the sputtering yield for SF5q ions was observed in comparison with the yields for Neq and Xeq ions. The results are discussed with the model of overlapping of individual collision cascades. q1999 Elsevier Science B.V. All rights reserved.