• Title of article

    Saturated adsorption of PH on Si 100/:P and its application to 3 digital control of phosphorus coverage on Si 100/surface

  • Author/Authors

    Y. Tsukidate، نويسنده , , M. Suemitsu، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    5
  • From page
    148
  • To page
    152
  • Abstract
    Si 100.surface, when fully saturated with PH3at room temperature, shows up uPs0.25 ML and u Hs0.75 ML. Based on this fact, a method has been developed to digitally control the phosphorus coverage as u Ps1y 0.75.n, where n is the number of sequence consisting of saturated adsorption of PH3and thermal desorption of H2. The good agreement of the experiment with this formula indicates that PH3 molecules do not chemisorb at P sites at room temperatures. q1999 Elsevier Science B.V. All rights reserved.
  • Keywords
    Phosphine , Hydrogen desorption , Si 100. , Phosphorus , In situ doping , Temperature-programmed desorption
  • Journal title
    Applied Surface Science
  • Serial Year
    1999
  • Journal title
    Applied Surface Science
  • Record number

    995801