Effects of thermal annealing on the strains and structures of CdTe epilayers grown on Si 100/substrates for various substrate tilt angles

Photoluminescence PL.measurements on epitaxial films grown on Si substrates by using molecular beam epitaxy were carried out at various substrate tilt angles to investigate the effect of annealing on the optical and the structural properties of CdTe epilayers. The strains for the as-grown and the annealed CdTe epitaxial layers on Si substrates as functions of the substrate tilt angle were obtained from the acceptor bound-exciton peak of the PL spectra. Possible primitive unit cells of the as-grown and the annealed CdTe epilayers are presented. q1999 Elsevier Science B.V. All rights reserved.