Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature

Sn-doped indium oxide ITO.films have been prepared on polyimide PI.thin film substrate at low substrate temperature 80–2408C.by reactive evaporation. The samples were deposited as polycrystalline films with a cubic bixbyite structure and a preferred orientation with the 111.plan parallel to the substrate. The structural, optical and electrical properties of the obtained films depending on deposition temperature have been investigated. High quality films with resistivity as low as 7=10y4 V cm and transmittance over 80% have been obtained by suitably controlling the deposition parameters. q1999 Elsevier Science B.V. All rights reserved.