The interaction of bismuth with the GaAs 111/B surface

We present a core level photoemission and low energy electron diffraction study of the interaction of Bi with the GaAs 111.B- 2=2.surface. Results for room temperature growth are consistent with islanding where the islands contain Bi in two distinct chemical forms. Some 30% of the clean surface As trimers are removed by the deposition of Bi. A c 4=2. structure is stable in the 110–3508C temperature range and its formation coincides with the complete removal of the clean surface As trimers and with all of the Bi being bonded to As of the bulk-terminating layer. A structural model for the Bi terminated surface is proposed. q1999 Elsevier Science B.V. All rights reserved