Characteristics of CrSi and Cr Ni/Si synthesis in MEVVA ion 2 2 source implantation and post-annealing processes

We investigate the formation of silicide layers in 111.Si wafers with a high-current implanter. Cr ions form a disilicide layer of low sheet resistance. If the sample is also implanted with Ni, the total number of Cr atoms is reduced by sputtering, and the previously prepared CrSi2layer is disordered. However, a stable textured Cr1yxNixSi2 phase can be prepared by proper annealing. Above 11508C the ternary phase segregates into CrSi2and NiSi2. Thus the introduction of Ni can result in well-defined and stable Cr1yxNixSi2 alloys. q2000 Elsevier Science B.V. All rights reserved