Title of article
Optical characterisation of pulsed laser deposited SiC films
Author/Authors
M. Schlaf، نويسنده , , D. Sands )، نويسنده , , P.H. Key، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
83
To page
88
Abstract
Thin films of SiC were deposited by pulsed laser deposition on silicon and fused silica substrates at room temperature
and 1125 K. The films were analysed by infrared reflection absorption spectroscopy IRRAS.and the resulting spectra were
characterised with a model to determine the film thickness and the crystal quality which is higher for the film deposited at
1125 K. The data obtained from UVrvis transmission spectroscopy were used to determine the optical bandgap
Eopticals1.3 eV.. q2000 Elsevier Science B.V. All rights reserved
Keywords
Pulsed laser deposition , silicon carbide , Infrared reflection absorption spectroscopy , Simulated annealing , SiC
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
995899
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