Epitaxial SrRuO thin films on LaAlO 100/ and Si 100/ 3 3

Epitaxial SrRuO3 SRO.thin films were deposited by pulsed laser deposition on LaAlO3 100.and Si 100.substrates. A study of the influence of substrate temperature and oxygen partial pressure on the structural and electrical properties is presented for films deposited on LaAlO3 100.. The dependence of the properties of SRO on film thickness was also studied. The crystal properties improved when a SrTiO3 STO.seed layer was used, although the surface of the SRO films deposited on this layer had a high density of outgrowths. SRO thin films deposited on Si 100.were epitaxial when an yttria-stabilised zirconia YSZ.buffer layer was used. The crystal structure and morphology of these films was determined. q2000 Elsevier Science B.V. All rights reserved.