Title of article
In situ and real-time ellipsometry monitoring of submicron titanium nitridertitanium silicide electronic devices
Author/Authors
P. Patsalas، نويسنده , , C. Charitidis، نويسنده , , S. Logothetidis، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
7
From page
256
To page
262
Abstract
We fabricated AlrTiN r TirSi.=15rSi 100.submicron devices by magnetron sputtering. Spectroscopic Ellipsometry x
SE. was used for in situ characterization of TiN , Ti and Si layers. The intermixing of TirSi layers and the phase x
transformations of TiSi during annealing were monitored by Kinetic Ellipsometry KE.. The metallic behavior of the TiNx
layers was studied by analyzing their dielectric function in the IR region, measured by Fourier Transform InfraRed
Spectroscopic Ellipsometry FTIRSE., and by the unscreened plasma energy "vpu.calculated by SE data analysis. q2000
Elsevier Science B.V. All rights reserved
Keywords
Titanium nitride , Titanium silicide , Microstructure , Spectroscopic ellipsometry , Optical properties
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
995926
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