UV laser photodeposition of carbon nitride thin films from gaseous precursors

We report on the synthesis of carbon nitride thin films using ArF excimer laser ls193 nm.irradiation of acetylene and ammonia gaseous mixtures. The influence of the precursor composition on the nitrogen incorporation in the films was investigated by different techniques, namely X-ray photoelectron spectrometry XPS., low-energy electron induced X-ray spectrometry LEEIXS.and IR spectrometry. Scanning electron microscopy was used to characterise the microstructure of the deposited films. As shown by XPS the NrC atomic ratio varies by changing the precursor composition and reaches a maximum of 0.75 for a flow rate ratio NH3:C2H2s5:1. Nitrogen as revealed by Fourier transform infrared spectrometry FTIR.is single or double chemically bonded to carbon. The morphology of the deposited films investigated by scanning electron microscopy SEM.depends also on the deposition parameters. q2000 Elsevier Science B.V. All rights reserved