Title of article
Pulsed laser deposition of ZnO thin films using a femtosecond laser
Author/Authors
Masayuki Okoshi، نويسنده , , Kouji Higashikawa، نويسنده , , Mitsugu Hanabusa، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
424
To page
427
Abstract
Transparent, conductive ZnO films were deposited by pulsed laser deposition PLD.using 790-nm, 130-fs laser pulses.
An optical transmittance as high as 88% in the visible region was obtained when deposited above 1508C. The electrical
resistivity of the films was 10y1 to 10y3 V cm between room temperature and 2708C. Sharp X-ray diffraction XRD.peaks
were observed for films deposited above 1508C on both quartz and Si. The results were obtained in absence of oxygen gas
during the deposition, unlike in previous PLD where nanosecond laser pulses were used. q2000 Elsevier Science B.V. All
rights reserved
Keywords
Femtosecond laser , ZnO film , Pulsed laser deposition , Transparency , Electric conduction
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
995951
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