Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition

The growth of cubic aluminum nitride AlN.and cubic gallium nitride GaN.is studied. The effects of ambient pressure and substrate temperature on the structure of the AlN and GaN films are systematically investigated. It is shown that the films are amorphous when the temperature and the pressure are too low. Cubic AlN is obtained at a temperature of 8008C and a pressure of 0.2 Torr. Cubic GaN can be obtained at 6008C with a cubic AlN buffer layer. q2000 Elsevier Science B.V. All rights reserved